MDS3603

MDS3603– Single P-Channel Trench MOSFET MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1mΩ General Description The MDS3603 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS = -30V ID = -12A @VGS = -10V RDS(ON) < 8.5mΩ @VGS = -20V < 10.1mΩ @VGS = -10V < 14.5mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Ther...