MDH3331

MDH3331 – P-Channel Trench MOSFET MDH3331 P-Channel Trench MOSFET, -20V, -3.5A, 75mΩ General Description The MDH3331 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. G S SOT-23 D Features à VDS = -20V à ID = -3.5 @ VGS = -10V à RDS(ON) <75mΩ @ VGS = -4.5V <105mΩ @ VGS = -2.5V Applications à PWM à Load Switch à General Purpose D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range (Note 1) Symbol VDSS VGSS ID IDM PD TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating -20 ±12 -3.5 -15 1.4 -55~+150 Unit V V A A W o...