MDI6N65B

MDI6N65B N-channel MOSFET 650V MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45Ω General Description The MDI6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Features  VDS = 650V  ID = 5.7A  RDS(ON) ≤ 1.45Ω Applications  Power Supply  PFC  Ballast @VGS = 10V @VGS = 10V GDS TO-251-SS (IPAK-SS) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD dv/dt EAR Iar EAS TJ, Tstg Rating 650 ±30 5.7 3.6 22.8 119 0.95 4.5 11.9 5.7 200 -55~150 Unit V V A A A W W/ oC V/ns mJ A mJ oC Symbol RθJA RθJC Rating 110 1.05 Unit oC/W oC/W Aug. 2021. Ver. 1.3 1 Magnachip Semiconductor Ltd. MDI6N65B N-channel MOSFET 650V Ordering Information Part Number MDI6N65BTH Marking MDI6N65B Temp. Range -55~150oC Package TO-251-SS(IPAK-SS) Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Sou...