MDIS2N65B

MDIS2N65B N-channel MOSFET 650V MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5Ω General Description The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 650V  ID = 1.95A  RDS(ON) ≤ 4.5Ω @VGS = 10V @VGS = 10V Applications  Power supply  Battery charger  Ballast G DS TO-251-VS (I-PAK-VS) Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Sep. 2013 Version 1.0 1 TC=25oC TC=100oC TC=...