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MDF6N65B N-channel MOSFET 650V
MDF6N65B
N-Channel MOSFET 650V, 6.0A, 1.45Ω
General Description
The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF6N65B is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
TO-220F
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(1) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol
VDSS VGS.