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MDF6N65B Dataheets PDF



Part Number MDF6N65B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDF6N65B DatasheetMDF6N65B Datasheet (PDF)

MDF6N65B N-channel MOSFET 650V MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45Ω General Description The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Features VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V TO-220F Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gat.

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MDF6N65B N-channel MOSFET 650V MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45Ω General Description The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Features VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V TO-220F Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(1) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGS.


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