N-Channel Trench MOSFET
MDIS4N65B N-channel MOSFET 650V
MDIS4N65B
N-Channel MOSFET 650V, 3.65A, 2.2Ω
General Description
These N-channel MOSFE...
Description
MDIS4N65B N-channel MOSFET 650V
MDIS4N65B
N-Channel MOSFET 650V, 3.65A, 2.2Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 650V ID = 3.65A RDS(ON) ≤ 2.2Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-251-VS (IPAK- VS)
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
G
Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg
S
Rating 650 ±30 3.65 2.3 14.6 68.3 0.54 6.83 4.5 170
-55~150
Uni...
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