N-Channel Trench MOSFET
MDD2N60/MDI2N60 N-channel MOSFET 600V
MDD2N60/MDI2N60
N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description
These N-ch...
Description
MDD2N60/MDI2N60 N-channel MOSFET 600V
MDD2N60/MDI2N60
N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 1.9A RDS(ON) ≤ 4.5Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
I-PAK G D S (TO-251)
G
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
S
Rating 60...
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