MDI1N60S

MDI1N60S N-channel MOSFET 600V MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V Applications Power supply Battery charger Ballast IPAK (Short lead) G D S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient1) Thermal Resistance, Junction-to-Case TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 600 ±30 1.0 0....