MDI6N60B

MDI6N60B N-channel MOSFET 600V MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω General Description The MDI6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI6N60B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 600 ±30 4.5* 2.8* 18* 73 0.59 7.3 4.5 140 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal ...