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Trench MOSFET. MDF8N60B Datasheet

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Trench MOSFET. MDF8N60B Datasheet






MDF8N60B MOSFET. Datasheet pdf. Equivalent




MDF8N60B MOSFET. Datasheet pdf. Equivalent





Part

MDF8N60B

Description

N-Channel Trench MOSFET



Feature


MDF8N60B N-channel MOSFET 600V MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω Ge neral Description These N-channel MOSFE T are produced using advanced MagnaChip ’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. Thes e devices are suitable device for SMPS, high Speed switching and general purpo se applications. Feat.
Manufacture

MagnaChip

Datasheet
Download MDF8N60B Datasheet


MagnaChip MDF8N60B

MDF8N60B; ures VDS = 600V ID = 8.0A RDS(ON) ≤ 1. 05Ω @ VGS = 10V @ VGS = 10V Applica tions Power Supply PFC High Current, Hi gh Speed Switching G DS Absolute Maxim um Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current(※) Pulsed Drain Current(1) Power Dissipation Repe titive Avalanche Energy(1) Peak Diode R ecovery dv/dt(3) Single .


MagnaChip MDF8N60B

Pulse Avalanche Energy(4) Junction and S torage Temperature Range ※ Id limited by maximum junction temperature Therma l Characteristics Characteristics Therm al Resistance, Junction-to-Ambient(1) T hermal Resistance, Junction-to-Case(1) TC=25oC TC=100 .


MagnaChip MDF8N60B

.

Part

MDF8N60B

Description

N-Channel Trench MOSFET



Feature


MDF8N60B N-channel MOSFET 600V MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω Ge neral Description These N-channel MOSFE T are produced using advanced MagnaChip ’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. Thes e devices are suitable device for SMPS, high Speed switching and general purpo se applications. Feat.
Manufacture

MagnaChip

Datasheet
Download MDF8N60B Datasheet




 MDF8N60B
MDF8N60B
N-Channel MOSFET 600V, 8A, 1.05
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 8.0A
RDS(ON) ≤ 1.05Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
8.0*
4.9*
32*
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
Jan. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.




 MDF8N60B
Ordering Information
Part Number
MDF8N60BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4.0A
VDS = 30V, ID = 4.0A
VDS = 480V, ID = 8.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 8.0A,
RG = 25Ω(3)
IS = 8.0A, VGS = 0V
IF = 8.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 8.0A, di/dt200A/us, VDDBVDSS, Rg =25Ω, Starting TJ=25°C
4. L=9.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min Typ Max Unit
600 -
2.0 -
-
V
4.0
- - 1 µA
- - 100 nA
0.85 1.05
- 8.5 - S
- 18.1
- 4.0
- 6.2
- 945
- 4.7
- 108
- 17.7
- 26.0
- 73.6
- 33.7
nC
pF
ns
- 8 -A
- 1.4 V
- 350
ns
- 3.3
µC
Jan. 2012 Version 1.0
2 MagnaChip Semiconductor Ltd.




 MDF8N60B
15
14 Vgs=5.0V
13 =5.5V
12
=6.0V
=6.5V
11 =7.0V
10 =10.0V
9 =15.0V
8
7
6
5
4
3
2
1
0
0
5
Notes
1. 250PulseTest
2. TC=25
10 15 20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 4.0A
2.0
1.5
1.0
0.5
0.0
-50
0
50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
1.6
1.4
1.2
VGS=10.0V
1.0
VGS=20V
0.8
0.6
2 4 6 8 10 12 14
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
16
1.2
Notes :
1. VGS = 0 V
2. ID = 250
1.1
1.0
0.9
0.8
-50 0 50 100 150
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation
Temperature
200
vs.
* Notes ;
10 1. Vds=30V
1
15025
-55
Notes :
1. VGS = 0 V
10 2.250µs Pulse test
150
25
1
0.1
246
VGS [V]
Fig.5 Transfer Characteristics
8
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jan. 2012 Version 1.0
3 MagnaChip Semiconductor Ltd.



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