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MDP13N50G/MDF13N50G N-channel MOSFET 500V
MDP13N50G / MDF13N50G
N-Channel MOSFET 500V, 13.0A, 0.5Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V VDS = 550V @ Tjmax ID = 13.0A @ VGS = 10V RDS(ON) < 0.5Ω @ VGS = 10V
Applications
Power Supply HID Lighting
D
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction temperature
Thermal Chara.