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MDP13N50G Dataheets PDF



Part Number MDP13N50G
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDP13N50G DatasheetMDP13N50G Datasheet (PDF)

MDP13N50G/MDF13N50G N-channel MOSFET 500V MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V VDS = 550V @ Tjmax ID = 13.0A @ VGS = 10V RDS(ON) < 0.5Ω @ VGS = 10V Applications Power .

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MDP13N50G/MDF13N50G N-channel MOSFET 500V MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V VDS = 550V @ Tjmax ID = 13.0A @ VGS = 10V RDS(ON) < 0.5Ω @ VGS = 10V Applications Power Supply HID Lighting D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) TC=25oC TC=100oC TC=25oC Derate above 25 oC Junction and Storage Temperature Range * Id limited by maximum junction temperature Thermal Chara.


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