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MDP7N50B / MDF7N50B N-channel MOSFET 500V
MDP7N50B / MDF7N50B
N-Channel MOSFET 500V, 7.0 A, 0.9Ω
General Description
The MDP/F7N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F7N50B is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP7N50B MDF7N50B 500 ±30
7.0 7.0* 4.2 4.2* 28 28* 114 36 0.91 0.29
11.4 4.5 .