N-Channel MOSFET
MMD60R360Q Datasheet
MMD60R360Q
600V 0.36Ω N-channel MOSFET
Description
MMD60R360Q is power MOSFET using Magnachip’s ...
Description
MMD60R360Q Datasheet
MMD60R360Q
600V 0.36Ω N-channel MOSFET
Description
MMD60R360Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.36
3 11 19
Unit V Ω V A nC
Package & Internal Circuit
D
D
G S
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code MMD60R360QRH
Marking 60R360Q
Temp. Range -55 ~ 150℃
Package TO-252
Packing Reel
RoHS Status Halogen Free
Jul. 2021. Revision 1.2
1
Magnachip Semiconductor Ltd.
MMD60R360Q Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
VDSS VGSS
ID
IDM PD EAS dv/dt dv...
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