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MME80R290P Dataheets PDF



Part Number MME80R290P
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MME80R290P DatasheetMME80R290P Datasheet (PDF)

MME80R290P Datasheet MME80R290P 800V 0.29Ω N-channel MOSFET  Description MME80R290P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 850 0.29 3 17 56 Unit V.

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MME80R290P Datasheet MME80R290P 800V 0.29Ω N-channel MOSFET  Description MME80R290P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 850 0.29 3 17 56 Unit V Ω V A nC  Package & Internal Circuit D D2PAK(TO-263) D G G S S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MME80R290PRH Marking 80R290P Temp. Range -55 ~ 150℃ Package D2-PAK Packing Reel RoHS Status Halogen Free Feb. 2021 Revision 1.1 1 Magnachip Semiconductor Ltd. MME80R290P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Symbol VDSS VGSS Continuous drain current(1) ID Pulsed drain current(2) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(3) Storage temperature Maximum operating junction temperature 1) Id limited by maximum junction temperature. 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS IDM PD EAS dv/dt dv/dt Tstg Tj Rating 800 ±30 17 10.8 51 181 670 50 15 -55 ~150 150 Unit V V A A A W mJ V/ns V/ns ℃ ℃ Note TC=25℃ TC=100℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 0.69 62.5 Unit ℃/W ℃/W Feb. 2021 Revision 1.1 2 Magnachip Semiconductor Ltd. MME80R290P Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min. Typ. Max. Unit Test Condition V(BR)DSS 800 - - V VGS = 0V, ID=0.25mA VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID=0.25mA IDSS - - 1 μA VDS = 800V, VGS = 0V IGSS - - 100 nA VGS = ±30V, VDS =0V RDS(ON) - 0.25 0.29 Ω VGS = 10V, ID = 11A  Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Energy Related (4) Turn On Delay Time Ciss Coss Crss Co(er) td(on) - 1830 - 1510 - 53.2 - 40 - 32 - VDS = 25V, VGS = 0V, pF f = 1.0MHz VDS = 0V to 640V, VGS = 0V,f = 1.0MHz Rise Time Turn Off Delay Time tr td(off) - 56.5 - 160 - ns VGS = 10V, RG = 25Ω, VDS = 400V, ID = 17A Fall Time tf - 49 - Total Gate Charge Gate – Source Charge Gate – Drain Charge Qg - 56 - Qgs - 10.4 - nC VGS = 10V, VDS =640V, ID = 17A Qgd - 22 - Gate Resistance RG - 2.05 - Ω VGS = 0V, f = 1.0MHz 4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Feb. 2021 Revision 1.1 3 Magnachip Semiconductor Ltd. MME80R290P Datasheet  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter Continuous Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Symbol Min. Typ. Max. Unit Test Condition ISD - - 17 A VSD - - 1.4 V ISD = 17 A, VGS = 0 V trr - 565 - ns ISD = 17 A Qrr - 9.6 - μC di/dt = 100 A/μs VDD = 100 V Irrm - 34.1 - A Feb. 2021 Revision 1.1 4 Magnachip Semiconductor Ltd.  Characteristic Graph  MME80R290P Datasheet Feb. 2021 Revision 1.1 5 Magnachip Semiconductor Ltd. MME80R290P Datasheet Feb. 2021 Revision 1.1 6 Magnachip Semiconductor Ltd. MME80R290P Datasheet Feb. 2021 Revision 1.1 7 Magnachip Semiconductor Ltd.  Test Circuit Same type as DUT 100KΩ 10V 1mA 10V DUT + VDS - Fig15-1. Gate charge measurement circuit MME80R290P Datasheet VGS 10V Qgs Qg Qgd Charge Fig15-2. Gate charge waveform DUT IS Rg 10KΩ Vgs ± 15V IF + - VDS L Same type as DUT + VDD - Fig16-1. Diode reverse recovery test circuit ID DUT Rg 25Ω VDS RL trr IFM 0.5 IRM ta tb di/dt 0.75 IRM 0.25 IRM IRM VR VRM(REC) Fig16-1. Diode reverse recovery test waveform VDS 90% Vgs tp + VDD - 10% VGS Fig17-1. Switching time test circuit for resistive load IAS DUT VDS Rg L Td(on) tr ton Td(off) tf toff Fig17-2. Switching time waveform tp IAS BVDSS tAV Vgs tp VDD + VDD - Fig18-1. Unclamped inductive load test circuit VDS(t) Rds(on) * IAS Fig18-2. Unclamped inductive waveform Feb. 2021 Revision 1.1 8 Magnachip Semiconductor Ltd. MME80R290P Datasheet  Physical Dimension TO-263 (D2PAK.


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