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MDP5N50 Dataheets PDF



Part Number MDP5N50
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP5N50 DatasheetMDP5N50 Datasheet (PDF)

MDP5N50 N-channel MOSFET 500V MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 5.0A  RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gat.

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MDP5N50 N-channel MOSFET 500V MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 5.0A  RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Sep 2011. Version 1.2 1 Symbol VDSS VGSS ID IDM PD dv/dt EAS TJ, Tstg Rating 500 ±30 5.0 3.2 20 93 0.74.


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