Document
MDP5N50 N-channel MOSFET 500V
MDP5N50
N-Channel MOSFET 500V, 5.0 A, 1.4Ω
General Description
The MDP5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP5N50 is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Sep 2011. Version 1.2
1
Symbol VDSS VGSS
ID
IDM
PD
dv/dt EAS TJ, Tstg
Rating 500 ±30 5.0 3.2 20 93 0.74.