MDP12N50

MDP12N50 N-channel MOSFET 500V MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP12N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) G S TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS V...