MDP06N033

MDP06N033– Single N-Channel Trench MOSFET 60V MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ General Description The MDP06N033 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP06N033 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. Features  VDS = 60V  ID = 120A @VGS = 10V  RDS(ON) < 3.3 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2015. Rev. 1.0 ...