Document
MDP15N075– Single N-Channel Trench MOSFET 150V
MDP15N075
Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ
General Description
Features
The MDP15N075 uses advanced MagnaChip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
VDS = 150V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 7.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3) Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resist.