MDE1932

MDE1932– Single N-Channel Trench MOSFET 80V MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description Features The MDE1991 uses advanced MagnaChip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.    These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 80V ID = 120A @VGS = 10V RDS(ON) < 3.4 mΩ @VGS = 10V 100% UIL Tested D D G S TO-263 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistan...