MDS1101

MDS1101 – Single N-Channel Trench MOSFET 12V MDS1101 Single N-channel Trench MOSFET 12V, 15A, 8mΩ General Description The MDS1101 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1101 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 12V  ID = 15A @VGS = 4.5V  RDS(ON) < 8.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G 8 Leads, SOIC D S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2016. Ver. 1.0 1 Symbol VDSS VGSS ID IDM ...