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MBQ50T65FESC Dataheets PDF



Part Number MBQ50T65FESC
Manufacturers MagnaChip
Logo MagnaChip
Description IGBT
Datasheet MBQ50T65FESC DatasheetMBQ50T65FESC Datasheet (PDF)

MBQ50T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ50T65FESC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 50A  Eoff = 0.55mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.) @diF/dt = 1000A/ μs  Maximum junction temperature 175.

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MBQ50T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ50T65FESC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 50A  Eoff = 0.55mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.) @diF/dt = 1000A/ μs  Maximum junction temperature 175°C Applications  PFC  UPS  PV Inverter  Welder  IH Cooker G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tjvjmax Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C Diode forward current limited by Tvjmax TC=25°C TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage Power dissipation Short circuit withstand time VC.


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