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MBQ50T65FESC 650V Field Stop IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications.
TO-247
MBQ50T65FESC
650V Field Stop IGBT
Features
High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 50A Eoff = 0.55mJ @ TC = 25°C High Input Impedance trr = 80ns (typ.) @diF/dt = 1000A/ μs Maximum junction temperature 175°C
Applications
PFC UPS PV Inverter
Welder IH Cooker
G C E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C TC=100°C
Pulsed collector current, tp limited by Tjvjmax
Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time VC.