MBQ60T65PES IGBT Datasheet

MBQ60T65PES Datasheet, PDF, Equivalent


Part Number

MBQ60T65PES

Description

IGBT

Manufacture

MagnaChip

Total Page 8 Pages
Datasheet
Download MBQ60T65PES Datasheet


MBQ60T65PES
MBQ60T65PES
High Speed Fieldstop Trench IGBT
Second Generation
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT 2nd Generation Technology, which is not only
the highest efficiency capable of switching behavior, but also it
is high ruggedness and excellent quality for solar inverter, UPS,
IH, welder and PFC application where low conduction losses
are essential
Features
High Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 60A
Eoff = 0.53mJ @ TC = 25°C
High Input Impedance
trr = 110ns (typ.) @diF/dt = 500A/ μs
Maximum Junction Temperature 175°C
Applications
PFC
UPS
PV Inverter
Welder
IH Cooker
TO-247
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tvjmax
Turn off safe operating area VCE 650V, Tvj 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
TC=25°C
TC=100°C
Short circuit withstand time
VCC 400V, RG = 7Ω, VGE = 15V, Tvj = 150°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Nov. 2015 Revision 0.0
1
Symbol
VCE
IC
ICp
-
IF
IFp
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
650
100
60
180
180
60
30
200
±20
428
214
5
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.35
1.2
Unit
°C/W
MagnaChip Semiconductor Ltd.

MBQ60T65PES
Ordering Information
Part Number
MBQ60T65PESTH
Marking
60T65PES
Temp. Range
-55~175°C
Package
TO-247
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristic (Tvj = 25°C unless otherwise specified)
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Dynamic Characteristic
Total gate charge
Gate-emitter charge
Gate-collector charge
Input capacitance
Reverse transfer capacitance
Output capacitance
Internal emitter inductance
measured 5mm (0.197 in.) from case
Switching Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Symbol
Conditions
Min
BVCES
VCE(sat)
VF
VGE(th)
ICES
IGES
IC = 2mA, VGE = 0V
IC = 60A, VGE =15V
Tvj = 25°C
Tvj = 175°C
VGE = 0V, IF = 25A
Tvj = 25°C
Tvj = 175°C
VCE = VGE, IC = 0.5mA
VCE = 650V, VGE = 0V, Tvj = 25°C
VGE = 20V, VCE = 0V
650
-
-
-
-
4.0
-
-
Qg
Qge
Qgc
Cies
Cres
Coes
LE
VCE = 520V, IC = 60A,
VGE = 15V
VCE = 25V, VGE = 0V,
f = 1MHz
-
-
-
-
-
-
-
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Irr
Qrr
trr
Irr
Qrr
VGE = 15V, VCC = 400V,
IC = 60A, RG = 7Ω,
Inductive Load, Tvj = 25°C
VGE = 15V, VCC = 400V,
IC = 60A, RG = 7Ω,
Inductive Load, Tvj = 175°C
IF = 25A, diF/dt = 500A/ μs,
Tvj = 25°C
IF = 25A, diF/dt = 500A/ μs,
Tvj = 175°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--
1.85 2.4
2.6 -
1.45 2.0
1.35 -
5.0 6.0
- 40
- ±100
V
V
V
V
μA
nA
95
19
47
2327
55
270
13.0
-
-
-
-
-
-
-
nC
pF
nH
42 -
54 -
ns
142 -
40 -
0.92 -
0.53 - mJ
1.45 -
45 -
58 -
ns
152 -
35 -
1.43 -
0.53 - mJ
1.96 -
110 - ns
18 - A
1.10 - μC
205 - ns
25 - A
2.67 - μC
Nov. 2015 Revision 0.0
2 MagnaChip Semiconductor Ltd.


Features MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES Hig h Speed Fieldstop Trench IGBT Second Ge neration General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2nd Generatio n Technology, which is not only the hig hest efficiency capable of switching be havior, but also it is high ruggedness and excellent quality for solar inverte r, UPS, IH, welder and PFC application where low conduction losses are essenti al Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 60A  Eoff = 0.53mJ @ TC = 25°C  High Input Impedance  trr = 110 ns (typ.) @diF/dt = 500A/ μs  Maxim um Junction Temperature 175°C Applica tions  PFC  UPS  PV Inverter  Welder  IH Cooker TO-247 G C E Maximum Rating Parameter Collector- emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tvjmax Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175.
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