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SLP60R850SJ / SLF60R850SJ
SLP60R850SJ / SLF60R850SJ
600V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Features
- 5A, 600V, RDS(on) typ. = 0.77Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP60R850SJ SLF60R850SJ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃)
Drain Current - Pulsed Gate-Source Voltage Single P.