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SLF3N80C Dataheets PDF



Part Number SLF3N80C
Manufacturers SL SEMI
Logo SL SEMI
Description N-Channel MOSFET
Datasheet SLF3N80C DatasheetSLF3N80C Datasheet (PDF)

SLP3N80C / SLF3N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features •.

  SLF3N80C   SLF3N80C


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SLP3N80C / SLF3N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V • Low gate charge ( typical 15nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Av.


SLP3N80C SLF3N80C VL53L1


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