DG6N60

DG6N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG6N60N，， ，，，。 ，，。 DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 6.0 1.8 14 V A Ω pF Symbol Package 1 /11 ABSOLUTE MAXIM...