DG55N06

DG55N06 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG55N06N，， ，，，。 ，，。 DG55N06 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. Symbol MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 60 55 18 115 V A mΩ pF Package １ /10 ABS...