DG630

DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 9.0 0.4 18 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMUM RA...