BF92302N

BYD Microelectronics Co., Ltd. General Description The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP.(VGS = 4.5V) RDS (on) = 60mΩ TYP.(VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter N-MOSFET Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg 20 ±8 3 12 1.3 150 -55~+150 V V A A W ℃ ℃ Note: Mounted on FR4 Board of 1”x1”. Caution: These values must not be exceeded under any conditions. Ordering Information z Part Number : BF92302N z Package : SOT-23 Datasheet TS-MOS-PD-0027 Rev.A/0 Page1of7 BYD Microelectronics Co., Ltd. Electrical Characteristics (TA =...