N-Channel MOSFET
HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excel...
Description
HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS EAS IAR PD TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current -continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
WFU/D4N60
600 4 1.8
±30 240
4 44 -55 ~ +150
300
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC
Thermal Resistance,Junction to Case
--
RθCA
T...
Similar Datasheet