N-Channel MOSFET
TSP10N65M/TSF10N65M
TSP10N65M/TSF10N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using ...
Description
TSP10N65M/TSF10N65M
TSP10N65M/TSF10N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V Low gate charge(typical 48nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25℃ TC = 100℃
Pulsed Drain Current
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃) -Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
TSP10N65M TSF10N65M
650
± 30
10.0
10.0*
6.0
6.0*
40
40*
709
16.2
4.5
162
52
1.3
0.42
-55 to +150
300
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance,Junction-to-Case Thermal Resistanc...
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