N-Channel MOSFET. TSU5N60M Datasheet

TSU5N60M Datasheet PDF, Equivalent


Part Number

TSU5N60M

Description

N-Channel MOSFET

Manufacture

Truesemi

Total Page 6 Pages
PDF Download
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TSU5N60M Datasheet
TSD5N60M/TSU5N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 3.0A, 600V, RDS(on) = 2.5@VGS = 10 V
- Low gate charge ( typical 16nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D
GS
GDS
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TSD5N60M / TSU5N60M
600
3.0
1.8
12
±30
210
4.5
5.8
4.5
58
0.46
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
http://www.truesemi.com
Typ Max Units
-- 2.16 /W
-- 50 /W
-- 110 /W
Rev. 00 October . 2012

TSU5N60M Datasheet
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
-- -- V
0.6 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 1.5 A
2.0 -- 4.0 V
-- 2.0 2.5
VDS = 40 V, ID = 1.5 A (Note 4) -- 4.7 -- S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 560 -- pF
-- 55 -- pF
-- 7 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
-- 10 -- ns
VDD = 300 V, ID = 4.5 A,
-- 40 -- ns
RG = 25
(Note 4, 5)
--
40
-- ns
-- 50 -- ns
VDS = 480 V, ID = 4.5 A,
-- 16 -- nC
VGS = 10 V
-- 2.5 -- nC
(Note 4, 5)
--
6.5
-- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 3.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 12 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.0 A
-- -- 1.4 V
trr Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
-- 300 -- ns
Qrr Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
--
2.0
-- uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 4.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 4.5A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature
http://www.truesemi.com
Rev. 00 October . 2012


Features Datasheet pdf TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 6 00V N-Channel MOSFET General Descripti on This Power MOSFET is produced using Maple semi‘s advanced planar stripe D MOS technology. This advanced technolog y has been especially tailored to minim ize on-state resistance, provide superi or switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are we ll suited for high efficiency switched mode power supplies, active power facto r correction based on half bridge topol ogy. Features - 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( t ypical 16nC) - High ruggedness - Fast s witching - 100% avalanche tested - Impr oved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Dr ain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃ ) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan.
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