TSA11N90M

TSA11N90M TSA11N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 11A,900V,Max.RDS(on)=1.20Ω @ VGS =10V Low gate charge(typical 52nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) ...