TSU60R580WT

TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. 600V @TJ = 25 ℃ Typ. RDS(on) = 0.5Ω Ultra Low gate charge (typ. Qg = 14.5nC) 100% avalanche tested TSD60R580WT TSU60R580WT TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Av...