N-Channel MOSFET
TSD65R380WT/TSU65R380WT 650V 11A N-Channel SJ-MOSFET
TSD65R380WT/TSU65R380WT
650V 11A N-Channel SJ-MOSFET
General Desc...
Description
TSD65R380WT/TSU65R380WT 650V 11A N-Channel SJ-MOSFET
TSD65R380WT/TSU65R380WT
650V 11A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
700V @TJ = 150 ℃ Max. RDS(on) = 0.38Ω Ultra Low gate charge (typ. Qg = 17.5nC) 100% avalanche tested
TSD65R380WT
TSU65R380WT
TO-252
TO-251
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
650
11 7
IDM Drain Current – Pulsed
(Note ...
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