N-Channel MOSFET
TSK80R380S1 800V 13.6A N-Channel SJ-MOSFET
TSK80R380S1
800V 13.6A N-Channel SJ-MOSFET
General Description
Truesemi SJ-...
Description
TSK80R380S1 800V 13.6A N-Channel SJ-MOSFET
TSK80R380S1
800V 13.6A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
850V @TJ = 150 ℃ Typ. RDS(on) = 0.34Ω Ultra Low gate charge (typ. Qg = 17.5nC) 100% avalanche tested
TO-247
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(...
Similar Datasheet