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TSB60R190S1 Dataheets PDF



Part Number TSB60R190S1
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSB60R190S1 DatasheetTSB60R190S1 Datasheet (PDF)

TSB60R190S1 600V 20A N-Channel SJ-MOSFET TSB60R190S1 600V 20A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/.

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TSB60R190S1 600V 20A N-Channel SJ-MOSFET TSB60R190S1 600V 20A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av.


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