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TSB60R190S1 600V 20A N-Channel SJ-MOSFET
TSB60R190S1
600V 20A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Av.