N-Channel MOSFET
TSB840M
TSB840M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced plan...
Description
TSB840M
TSB840M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V Low gate charge(typical 30nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
D2-PAK ( TO-263 )
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
...
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