N-Channel MOSFET
TSA16N50M
TSA16N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced ...
Description
TSA16N50M
TSA16N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
16.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V Low gate charge(typical 45nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS EAR dv/dt
Drain-Source Voltage Gate-Source Voltage
Drain Current
Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC = 25℃ TC = 100℃
(Note 1) (Note 2) ...
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