N-Channel MOSFET. TSU1N60M Datasheet

TSU1N60M Datasheet PDF, Equivalent


Part Number

TSU1N60M

Description

N-Channel MOSFET

Manufacture

Truesemi

Total Page 10 Pages
PDF Download
Download TSU1N60M Datasheet PDF


TSU1N60M Datasheet
TSD1N60M/TSU1N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V
• Low gate charge(typical 5.2nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Value
600
±30
1.0
0.60
4.0
33
2.8
4.5
28
0.22
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient*
Thermal Resistance,Junction-to-Ambient
Max
4.53
50
110
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B3
www.truesemi.com

TSU1N60M Datasheet
Electrical Characteristics TJ=25 unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID =0.50A
Min Typ Max Units
2.0 -- 4.0 V
-- 9.5 11.5
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to
25
IDSS
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
VGS = 30 V, VDS = 0 V
IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V
Dynamic Characteristics
600
--
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 1.0A,
RG = 25 Ω
(Note 4,5)
VDS = 480 V, ID = 1.0A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS =0.5A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS =1.0A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH, IAS=1.0A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤0.3A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
-- -- V
0.7 -- V/
-- 10 uA
-- 100 uA
-- 100 nA
-- -100 nA
140 --
20 --
3.5 --
pF
pF
pF
10 -- ns
20 -- ns
15 -- ns
30 -- ns
5.2 -- nC
1.0 -- nC
2.5 -- nC
-- 1.0
-- 4.0
-- 1.4
200 --
0.5 --
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B3
www.truesemi.com


Features Datasheet pdf TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600 V N-Channel MOSFET General Description This Power MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology ha s been especially tailored to minimize on-state resistance, provide superior s witching performance, and withstand hig h energy pulse in the avalanche and com mutation mode. These devices are well s uited for high efficiency switched mode power supplies, active power factor co rrection based on half bridge topology. Features • 1.0A,600V,Max.RDS(on)=11 .5 Ω @ VGS =10V • Low gate charge(ty pical 5.2nC) • High ruggedness • Fa st switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherw ise specified Symbol VDSS VGS ID IDM E AS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Volt age Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Singl e Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energ.
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