TSD80R1K3S1

TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features 850V @TJ = 150 ℃ Typ. RDS(on) = 1.1Ω Ultra Low gate charge (typ. Qg = 15nC) 100% avalanche tested TSD80R1K3S1 TSU80R1K3S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Avala...