N-Channel MOSFET
TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET
TSD60R2K3S1/TSU60R2K3S1
600V 2.3A N-Channel SJ-MOSFET
General De...
Description
TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET
TSD60R2K3S1/TSU60R2K3S1
600V 2.3A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
650V @TJ = 150 ℃ Typ. RDS(on) = 1.9Ω Ultra Low gate charge (typ. Qg = 7nC) 100% avalanche tested
TSD60R2K3S1
TSU60R2K3S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pu...
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