N-Channel MOSFET. TSU60R2K3S1 Datasheet

TSU60R2K3S1 Datasheet PDF, Equivalent


Part Number

TSU60R2K3S1

Description

N-Channel MOSFET

Manufacture

Truesemi

Total Page 9 Pages
PDF Download
Download TSU60R2K3S1 Datasheet PDF


TSU60R2K3S1 Datasheet
TSD60R2K3S1/TSU60R2K3S1
600V 2.3A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 650V @TJ = 150
• Typ. RDS(on) = 1.9Ω
• Ultra Low gate charge (typ. Qg = 7nC)
• 100% avalanche tested
TSD60R2K3S1
TSU60R2K3S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
dvds/dt Drain Source voltage slope (Vds=480V)
PD Power Dissipation (TC = 25)
TJ, TSTG
TL
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
2.3*
1.4*
6*
±30
11
0.4
0.06
15
50
22.5
-55 to +150
300
Value
5.6
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
V/ns
W
Unit
/W
/W
/W
www.truesemi.com

TSU60R2K3S1 Datasheet
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to
25
Zero Gate Voltage Drain
Current
VDS = 600V, VGS = 0V
TC = 25
VDS = 600V, VGS = 0V
TC = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
600
--
--
--
--
--
650
0.6
--
10
--
--
--
--
1
--
100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
V
V
V/
µA
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1A
2.5 --
-- 1.9
4.5
2.3
V
Ω
gFS
Forward Trans conductance VDS = 40V, ID = 2A (Note 4)
-- 2
--
S
Rg
Gate resistance
f=1 MHz, open drain
-3
-
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
Coss
Output Capacitance
f = 1.0MHz
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 1A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 1A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 1A
trr
Reverse Recovery Time
VGS = 0V, IF = 1A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
-- 130
-- 40
-- 4
--
--
--
-- 7
-- 7
-- 30
-- 50
-- 7
-- 0.8
-- 3.6
--
--
--
--
--
--
--
-- --
-- --
-- 0.9
-- 150
-- 1.2
2
6
1.5
--
--
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=0.4A, VDD=50V, Starting TJ=25
3. ISD≤2.3A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com


Features Datasheet pdf TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Chan nel SJ-MOSFET TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFE T family that is utilizing an advanced charge balance mechanism for outstandin g low on-resistance and lower gate char ge performance. This advanced technolog y has been tailored to minimize conduct ion loss, provide superior switching pe rformance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FE T is suitable for various AC/DC power c onversion in switching mode operation f or higher efficiency. • 650V @TJ = 1 50 ℃ • Typ. RDS(on) = 1.9Ω • Ult ra Low gate charge (typ. Qg = 7nC) • 100% avalanche tested TSD60R2K3S1 TSU 60R2K3S1 TO-252 Absolute Maximum Ratin gs TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Dra in Current – Pulsed (Note 1) Gate-Source voltage Single Pu.
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