TSP2N60MZ

TSP2N60MZ / TSF2N60MZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching 100% avalanche tested ESD improved capability Improved dv/dt capability GDS TO-220 GD S TO-220F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Av...