TSD2N60MZ

TSD2N60MZ / TSU2N60MZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching 100% avalanche tested ESD improved capability Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage ...