N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Low on-resistance Capable of 2.5V gate drive Surface mount package
DESCRIPTION
SSM9926TGO
N-CHANNEL ENH...
Description
PRODUCT SUMMARY
Low on-resistance Capable of 2.5V gate drive Surface mount package
DESCRIPTION
SSM9926TGO
N-CHANNEL ENHANC8 EMENT MODE POWER MOSFET
A
t
D1 D2
G1 G2 S1
S2
The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID
8
20V 32mΩ 4.7A
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
G2 S2 S2 D2
TSSOP-8
G1 S1
S1 D1
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THETRMAL DATA
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 20 ±12 4.7 3.8 20 1
0.008 -55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Max.
Value 125
Unit ℃/W
03/11/2007 Re...
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