SSM9926GEO

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. RoHS compliant. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb Thermal Resistance Junction-ambient BV DSS R DS(ON) ID 20V 28mΩ 4.6A D1 D2 G1 G2 S1 S2 Rating 20 ± 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 125 Unit °C/W Rev.2.10 1/29/2005 www.Si...