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PRODUCT SUMMARY
Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package
SSM9926O
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A
D1
G1 G2 S1
D2 S2
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
BVDSS RDS(ON) ID
8
20V 28mΩ 4.6A
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THTERMAL DATA
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 20
4.6 3.7 20 1 0.008 -55 to 150 -55 to 150
Units V V A
A A W W/℃ ℃ ℃
Max.
Value 125
Unit ℃/W
03/11/2.