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SSM9926O Dataheets PDF



Part Number SSM9926O
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM9926O DatasheetSSM9926O Datasheet (PDF)

PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET A D1 G1 G2 S1 D2 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS BVDSS RDS(ON) ID 8 20V 28mΩ 4.6A G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 .

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PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET A D1 G1 G2 S1 D2 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS BVDSS RDS(ON) ID 8 20V 28mΩ 4.6A G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THTERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 125 Unit ℃/W 03/11/2.


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