SSM20P02J

SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement 2.5V gate drive capability Fast switching D G S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BV DSS R DS(ON) ID -20V 52mΩ -18A G D S TO-252(H) The TO-252 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM20P02J) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V ID@TA=100℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range G D S TO-251(J) Rating - 20 ± ...