N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM03N70GH/GJ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Repetitive Avalanche Rated Fast Switching Speed S...
Description
SSM03N70GH/GJ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement
D
G S
BVDSS RDS(ON) ID
600V 3.6Ω 3.3A
DESCRIPTION
The TO-252 package is universally preferred for all commercialIndustrial surface mount applications and suited for AC/DC converters. The through-hole version (SSM03N70GH/GJ) is available for low-profile applications.
GD S
TO-252(H)
RoHS-compliant
G DS
TO-251(J)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS IAR EAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-c Rthj-a
Parameter Thermal Resistance Junction-case Thermal Resistance...
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