SSM9987GM

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Surface Mount Package DESCRIPTION D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 80V 90mΩ 3.5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS G1 D1 G2 S1 D2 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 80 ±25 3.5 2.8 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Max. Value 62.5 Unit ℃/W 05/31/2007 ...