N-channel Enhancement-mode Power MOSFET
SSM09N90GW N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
900V 1.2Ω 8.6A
Pb-free; RoHS-co...
Description
SSM09N90GW N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
900V 1.2Ω 8.6A
Pb-free; RoHS-compliant TO-247
G D S
TO-247 (suffix W)
DESCRIPTION
The SSM09N90GW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters and offline power supplies.
The SSM09N90GW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
EAS IAS E AR TSTG TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanch...
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