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SSM09N90GW

Silicon Standard

N-channel Enhancement-mode Power MOSFET

SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 900V 1.2Ω 8.6A Pb-free; RoHS-co...


Silicon Standard

SSM09N90GW

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Description
SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 900V 1.2Ω 8.6A Pb-free; RoHS-compliant TO-247 G D S TO-247 (suffix W) DESCRIPTION The SSM09N90GW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters and offline power supplies. The SSM09N90GW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS IAS E AR TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanch...




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